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Industry's richest 5-megapixel quarter-inch CMOS image-sensor roadmap increases design-in flexibility by combining advanced compact-pixel technology, industry-standard interfaces and advanced packaging options

GENEVA, Oct. 13 /PRNewswire-FirstCall/ -- STMicroelectronics , a world leader in CMOS imaging technology, today unveiled details of its roadmap for new 5M-pixel CMOS image sensors in the standard quarter-inch optical format commonly used in camera-phone handsets. ST's latest leading-edge sensors offer a choice of features creating the richest choice of sensors at the 5-megapixel resolution.

ST's new sensors will increase flexibility for designers, with options including raw Bayer or System-on-Chip (SoC) sensors, support for Extended Depth of Field (EDoF) or cameras with an on-chip autofocus driver, high-speed industry-standard data interfaces, and package technologies supporting conventional camera assemblies, as well as the latest ultra-small wafer-level cameras.

The announcement follows the launch of 3-megapixel EDoF sensors announced by ST in February 2009. "Our new 5-megapixel quarter-inch sensors are part of our strategy to build a complete and competitive EDoF sensor roadmap," said Arnaud Laflaquiere, ST's Sensor Business Unit Director. "Utilizing our most advanced 65/45nm pixel technology with unique techniques to maximize image quality, as well as packaging compatible with wafer-level camera assembly, enables us to deliver a wide range of innovative and attractive solutions at competitive system costs."